(a) (b) (c) (d) (e) (f) (g) Figure 5. Masks for device fabrication. (a) Whole wafer with three masks together; (b) One device in the wafer with three masks together; (c) Pattern demonstrated on device; (d) Metal pad mask for only one device in the wafer; (e) Bond pad mask for only one device in the wafer; (f) Beam pattern mask for only one device in the wafer; (g) Pattern demonstrated on beam pattern mask. (a) (b) Figure 6. Equipment for writing beam pattern: (a) SUSS; (b) HEIDELBERG DWL 66FS 151
RkJQdWJsaXNoZXIy MTMzNzEzMQ==